Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure

The first distributed feedback surface emitting laser diode is realized with Al0.3Ga0.7As/GaAs multilayered heterostructure. Transverse junction-stripe (TJS) type lateral carrier injection is employed. The threshold current is 120 mA at 150 K with the active layer thickness of 6 µm. The temperature coefficient of the lasing wavelength is equal to a conventional DFB laser diode.