Demonstration of 2e12cm2eV1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

This study reports on the low interface trap density obtained from MOS capacitors and transistors with 2.5nm EOT using MoS2 flakes in back-gated configuration. Design ideology to measure thin flake structures is explained. CV measurements on MOSCAPs show Si-high-k like behavior with a midgap Dit of 2e12cm2eV1. By using CV measurements, the thickness of the MoS2 layer was also extracted. Display Omitted CV measurements and Dit extraction reported for the first time on sub-12nm thick MoS2 flakes.Two different MOS capacitor structures were studied.From the first one, we report an interface trap density of 2e12cm2eV1.The second one provided the thickness of MoS2 films.From FET measurements, we extract Dit of 6e12cm2eV1 from subthreshold slope.

[1]  Jing Kong,et al.  Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. , 2014, Nature communications.

[2]  Woong Choi,et al.  Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals. , 2016, ACS applied materials & interfaces.

[3]  J. Chen,et al.  A CV technique for measuring thin SOI film thickness , 1991, IEEE Electron Device Letters.

[4]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[5]  F. Miao,et al.  Hopping transport through defect-induced localized states in molybdenum disulphide , 2013, Nature Communications.

[6]  Branimir Radisavljevic,et al.  Integrated circuits and logic operations based on single-layer MoS2. , 2011, ACS nano.

[7]  Debdeep Jena,et al.  Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors , 2015 .

[8]  P. D. Ye,et al.  $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric , 2011, IEEE Electron Device Letters.

[9]  I. Radu,et al.  Highly efficient and stable MoS2 FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating. , 2017, Nanoscale.

[10]  S. Luryi.  Quantum capacitance devices , 1988 .

[11]  I. Radu,et al.  Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration , 2016 .