On-Chip T/R Switchable Balun for 5- to 6-GHz WLAN Applications

This brief presents a transmit/receive (T/R) switch combined with a transformer balun. The differential inductor of the transformer balun is symmetrically wound to have the center taps at the outmost winding. The center taps are controlled by nMOS transistors to switch between transmit and receive modes. The transformer balun is matched at 5-6 GHz using parasitic capacitances of the transistors at the differential port and an integrated capacitor at the single-ended port. For high transmit power handling, two transistors are stacked at the transmit path, and the source and drain of the transistors are biased with a dc voltage. The measured insertion loss of the T/R switchable balun is 2.4-3.3 dB at 5-6 GHz with a return loss of less than -16 dB. The amplitude and phase imbalance of the balun, respectively, are less than 1 dB and 4°. The input 1-dB power compression points for the transmit and receive mode are 28 and 20 dBm, respectively. The integrated T/R switchable balun occupies only 0.12 mm2.

[1]  T. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996 .

[2]  W. Marsden I and J , 2012 .

[3]  G.M. Rebeiz,et al.  A Low-Loss Double-Tuned Transformer , 2007, IEEE Microwave and Wireless Components Letters.

[4]  G.M. Rebeiz,et al.  5–6 GHz SPDT switchable balun using CMOS transistors , 2008, 2008 IEEE Radio Frequency Integrated Circuits Symposium.

[5]  Haifeng Xu,et al.  A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells , 2007, IEEE Journal of Solid-State Circuits.

[6]  Gabriel M. Rebeiz,et al.  $Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$\mu{\hbox {m}}$ CMOS , 2008, IEEE Transactions on Microwave Theory and Techniques.

[7]  C. Andrei,et al.  Analysis, Design, Modeling, and Characterization of Low-Loss Scalable On-Chip Transformers , 2013, IEEE Transactions on Microwave Theory and Techniques.

[8]  Mark Ruberto,et al.  A 1x2 MIMO Multi-Band CMOS Transceiver with an Integrated Front-End in 90nm CMOS for 802.11a/g/n WLAN Applications , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[9]  He Li,et al.  A Differential CMOS T/R Switch for Multistandard Applications , 2006, IEEE Transactions on Circuits and Systems II: Express Briefs.

[10]  Yanjie Wang,et al.  A Transformer-Based Broadband Front-End Combo in Standard CMOS , 2012, IEEE Journal of Solid-State Circuits.

[11]  Lawrence E. Larson,et al.  Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2$\, \times \,$2 802.11n MIMO WLAN SoC , 2010, IEEE Journal of Solid-State Circuits.