CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION

Buried layers were obtained by implanting 3 MeV AS++-ions into Si-wafers. Annealing of these layers can be achieved with Q-switched C02-laser irradiation, but not with Q-switches Nd-YAGor ruby lasers. It is shown that laser annealing shifts the doping profile towards the surface.