论文信息 - NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-/spl mu/m gate CMOS generation - 字舞流文

NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-/spl mu/m gate CMOS generation

C. T. Liu | K. Yamaguchi | C. Liu | N. Kimizuka | K. Imai | T. Horiuchi | T. Iizuka | R. Keller | K. Imai