Temperature‐dependent threshold and modulation characteristics in InGaAs/GaAs quantum‐well ridge‐waveguide lasers

The observed temperature dependence of threshold currents in InGaAs/GaAs quantum‐well ridge‐waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge‐waveguide laser models. Based on the same model, the temperature‐dependent modulation characteristics for InGaAs/GaAs quantum‐well ridge‐waveguide lasers are also investigated.