论文信息 - Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs - 字舞流文

Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs

Lester F. Eastman | Ho-Young Cha | Michael G. Spencer | Christopher Harris | Per Ericsson | Andrey O. Konstantinov | L. Eastman | H. Cha | M. Spencer | A. Konstantinov | P. Ericsson | Y. Choi | C. Harris | Y. C. Choi

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