Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation
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[1] B. Aspar,et al. A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si , 2000 .
[2] M. Nastasi,et al. Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon , 1999 .
[3] M. Nastasi,et al. Fracture toughness of diamondlike carbon coatings , 1999 .
[4] Amit Misra,et al. Residual stresses and ion implantation effects in Cr thin films , 1999 .
[5] Robert Hull,et al. Properties of Crystalline Silicon , 1999 .
[6] Michel Bruel,et al. The History, Physics, and Applications of the Smart-Cut® Process , 1998 .
[7] S. Kalbitzer,et al. Energy loss and straggling of H and He ions of keV energies in Si and C , 1998 .
[8] Y.-L. Chao,et al. Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting , 1998 .
[9] M. Loboda,et al. Understandillg hydrogen silsesquioxane-based dielectric film processing , 1998 .
[10] C. Varma,et al. HYDROGEN-IMPLANT INDUCED EXFOLIATION OF SILICON AND OTHER CRYSTALS , 1997 .
[11] A. Agarwal,et al. On the mechanism of the hydrogen-induced exfoliation of silicon , 1997 .
[12] L. B. Freund,et al. A lower bound on implant density to induce wafer splitting in forming compliant substrate structures , 1997 .
[13] R. Averback,et al. Fundamental aspects of defect production in solids , 1997 .
[14] P. Ehrhart,et al. BOUND VACANCY INTERSTITIAL PAIRS IN IRRADIATED SILICON , 1997 .
[15] S. Hopfe,et al. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates , 1997 .
[16] Theodore V. Vorburger,et al. Calibration of scanning electron microscope magnification standards SRM484 , 1996, Advanced Lithography.
[17] Michel Bruel,et al. Application of hydrogen ion beams to Silicon On Insulator material technology , 1996 .
[18] D. Fink,et al. Hydrogen implantation and diffusion in silicon and silicon dioxide , 1995 .
[19] Van de Walle Cg,et al. ENERGETICS OF BOND-CENTERED HYDROGEN IN STRAINED SI-SI BONDS , 1995 .
[20] G. Cerofolini,et al. A fast technique for the quantitative analysis of channeling RBS spectra , 1992 .
[21] Ottaviani,et al. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon. , 1992, Physical review. B, Condensed matter.
[22] Cynthia A. Volkert,et al. Stress and plastic flow in silicon during amorphization by ion bombardment , 1991 .
[23] J. Pankove,et al. Hydrogen in semiconductors , 1991 .
[24] J. Poate,et al. Point defect populations in amorphous and crystalline silicon , 1990 .
[25] S. Dannefaer. Defects in semiconductors , 1989 .
[26] Nichols,et al. Properties of hydrogen in crystalline silicon under compression and tension. , 1989, Physical review letters.
[27] Pantelides,et al. Theory of hydrogen diffusion and reactions in crystalline silicon. , 1989, Physical review letters.
[28] Snyder,et al. State and motion of hydrogen in crystalline silicon. , 1988, Physical review. B, Condensed matter.
[29] Chang,et al. Theory of hydrogen passivation of shallow-level dopants in crystalline silicon. , 1988, Physical review letters.
[30] W. Gibson,et al. The angular dependence of energy loss of channeled 2 MeV helium ions along Si 〈100〉 axis , 1986 .
[31] J. Ziegler,et al. stopping and range of ions in solids , 1985 .
[32] Lawrence R. Doolittle,et al. Algorithms for the rapid simulation of Rutherford backscattering spectra , 1985 .
[33] A. Anttila,et al. Ranges of the 0.3–2 MeV H+ and 0.7–2 MeV H+ 2 ions in Si and Ge , 1982 .
[34] A. Anttila,et al. Modal ranges of 400 - 1800 keV 4He+ ions in si measured via blistering , 1981 .
[35] James W. Mayer,et al. Ion implantation in semiconductors , 1973 .
[36] M. Ashby,et al. Diffraction contrast from spherically symmetrical coherency strains , 1963 .