论文信息 - Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Abstract The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

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