Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells

To optimize the quantum efficiency a detailed study of loss processes in GaInN/GaN QWs is necessary. Therefore Ga1−xInxN/GaN quantum wells (QWs) were grown under various conditions and were investigated by photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD). The internal quantum efficiency at room temperature was determined from the temperature dependence of the integrated PL intensity. We investigated the influence of the QW width on the quantum efficiency. The temperature dependent quantum efficiencies were analyzed by determining the relevant thermal activation energies and these were associated to three processes limiting the quantum efficiency at room temperature: carrier confinement, excitonic binding, and, least important, localisation. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)