The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations
暂无分享,去创建一个
Chris R. Kleijn | P. K. Larsen | C.E.C. Dam | P. Larsen | C. Kleijn | R. Dorsman | P. Hageman | P. R. Hageman | A. Grzegorczyk | A. P. Grzegorczyk | R. Dorsman | C.E.C. Dam
[1] C. Hong,et al. Preparation and properties of free-standing HVPE grown GaN substrates , 1998 .
[2] William S. Wong,et al. Damage-free separation of GaN thin films from sapphire substrates , 1998 .
[3] G. Fitzl,et al. Study on the growth rate in VPE of GaN , 1981 .
[4] J. Schermer,et al. GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition , 2003 .
[5] A vertical reactor for deposition of gallium nitride , 2000 .
[6] R. Cadoret,et al. Growth of gallium nitride by HVPE , 2001 .
[7] Robert J. Kee,et al. A FORTRAN COMPUTER CODE PACKAGE FOR THE EVALUATION OF GAS-PHASE, MULTICOMPONENT TRANSPORT PROPERTIES , 1986 .
[8] P. Larsen,et al. Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy , 2001 .
[9] M. J. Anders,et al. Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves , 1995 .
[10] Izabella Grzegory,et al. High pressure growth of bulk GaN from solutions in gallium , 2001 .
[11] James H. Edgar,et al. Substrates for gallium nitride epitaxy , 2002 .
[12] M. Coltrin,et al. Mass transport in the epitaxial lateral overgrowth of gallium nitride , 2001 .
[13] C. F. Curtiss,et al. Molecular Theory Of Gases And Liquids , 1954 .
[14] A. Trassoudaine,et al. Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen , 2001 .
[15] P. Larsen,et al. Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy , 2001 .
[16] M. Meyyappan,et al. Computational Modeling in Semiconductor Processing , 1994 .
[17] Y. Kumagai,et al. Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) , 2001 .
[18] Y. Makarov,et al. Modeling Study of Hydride Vapor Phase Epitaxy of GaN , 1999 .
[19] Modeling of GaN hydride vapor phase epitaxy , 1998 .
[20] M. Boćkowski,et al. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE , 2002 .
[21] William S. Wong,et al. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off , 2000 .
[22] M. Boćkowski,et al. Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy , 2003 .
[23] Akinori Koukitu,et al. Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN , 1998 .