The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Abstract In the study, presented in this paper, the growth of GaN layers by Hydride vapour phase epitaxy was investigated both experimentally and numerically. Modelling the flows in the reactor, combined with basic chemistry, gives a good approximation to the actual growth experiments. It was found that small changes in the reactor geometry, e.g. the inlet of GaCl, have a large effect on the growth rate as well as on the uniformity of the growth.

[1]  C. Hong,et al.  Preparation and properties of free-standing HVPE grown GaN substrates , 1998 .

[2]  William S. Wong,et al.  Damage-free separation of GaN thin films from sapphire substrates , 1998 .

[3]  G. Fitzl,et al.  Study on the growth rate in VPE of GaN , 1981 .

[4]  J. Schermer,et al.  GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition , 2003 .

[5]  A vertical reactor for deposition of gallium nitride , 2000 .

[6]  R. Cadoret,et al.  Growth of gallium nitride by HVPE , 2001 .

[7]  Robert J. Kee,et al.  A FORTRAN COMPUTER CODE PACKAGE FOR THE EVALUATION OF GAS-PHASE, MULTICOMPONENT TRANSPORT PROPERTIES , 1986 .

[8]  P. Larsen,et al.  Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy , 2001 .

[9]  M. J. Anders,et al.  Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves , 1995 .

[10]  Izabella Grzegory,et al.  High pressure growth of bulk GaN from solutions in gallium , 2001 .

[11]  James H. Edgar,et al.  Substrates for gallium nitride epitaxy , 2002 .

[12]  M. Coltrin,et al.  Mass transport in the epitaxial lateral overgrowth of gallium nitride , 2001 .

[13]  C. F. Curtiss,et al.  Molecular Theory Of Gases And Liquids , 1954 .

[14]  A. Trassoudaine,et al.  Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen , 2001 .

[15]  P. Larsen,et al.  Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy , 2001 .

[16]  M. Meyyappan,et al.  Computational Modeling in Semiconductor Processing , 1994 .

[17]  Y. Kumagai,et al.  Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) , 2001 .

[18]  Y. Makarov,et al.  Modeling Study of Hydride Vapor Phase Epitaxy of GaN , 1999 .

[19]  Modeling of GaN hydride vapor phase epitaxy , 1998 .

[20]  M. Boćkowski,et al.  Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE , 2002 .

[21]  William S. Wong,et al.  Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off , 2000 .

[22]  M. Boćkowski,et al.  Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy , 2003 .

[23]  Akinori Koukitu,et al.  Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN , 1998 .