Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky‐barrier cells

The photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag sandwich cells are reported. At low voltages, the current in the forward direction varies exponentially with voltage. A charge density of [inverted lazy s]1018/cm3 is estimated from C‐V measurements. The short‐circuit photocurrent JscαFm (m [inverted lazy s]0.5), where F is the incident light intensity. The open‐circuit photovoltage Vocα logF as expected for a Schottky barrier or p‐n junction. The J‐V curve in the photovoltaic mode is characteristic of a cell with large series resistance. From the photovoltaic action spectra, the electron diffusion length is estimated to be [inverted lazy s]1.5×10−6 cm. The action spectrum is dependent on the direction of the incident radiation. A theory is presented which explains the results. The junction is attributed to a Schottky barrier of Vd ∼ 0.6 eV and width ∼ 2.5 × 10−6 cm estimated from C‐V measurement. The values determined from photovoltaic measurements are in agreement. The lifetime of ...