Structure and properties of tin‐doped indium oxide thin films prepared by reactive electron‐beam evaporation with a zone‐confining arrangement

The microstructure and electrical properties of tin‐doped indium oxide thin films crystallized under the action of a temperature gradient are compared with those of films prepared under uniform temperature. This zone‐confining process, coupled with slow deposition rates, causes preferential segregation of dopants from grains growing at lower temperatures toward grain boundaries located at higher temperature. Recrystallization within a chain or zone of grains on a line of equal temperature causes these grains to be oriented in the same direction. The boundaries separating grains are twin boundaries. Electronic mean free paths in the zone‐confined specimens are from two to four times the average size of the grains.

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