Chemical structure of ultrathin thermally grown oxides on a Si(100)-wafer using core level photoemission
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[1] Y. Xing,et al. Orientation dependent adsorption on a cylindrical silicon crystal. II. Oxygen , 1985 .
[2] F. Bechstedt,et al. Interpretation of XPS core level shifts and structure of thin silicon oxide layers , 1985 .
[3] Franz J. Himpsel,et al. Probing the transition layer at the SiO2‐Si interface using core level photoemission , 1984 .
[4] F. Himpsel,et al. Multiple-bonding configurations for oxygen on silicon surfaces , 1983 .
[5] F. Himpsel,et al. Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces , 1983 .
[6] H. Wagner,et al. Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfaces , 1982 .
[7] G. Hollinger. Structures chimique et electronique de l'interface SiO2-Si , 1981 .
[8] Anupam Madhukar,et al. High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface , 1979 .
[9] P. Pianetta,et al. Electron-spectroscopic studies of the early stages of the oxidation of Si , 1979 .
[10] G. Mcguire,et al. Study of the x-ray photoelectron spectrum of tungsten—tungsten oxide as a function of thickness of the surface oxide layer , 1972 .