Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm*

Double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm, with room‐temperature pulsed thresholds as low as 2.8 kA/cm2, have been fabricated by liquid‐phase epitaxy on melt‐grown InP substrates.

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