Thermal oxidation of As and Ge implanted Si(1 0 0)
暂无分享,去创建一个
S. Colonna | F. Iacona | S. Scalese | A. Terrasi | V. Raineri | S. Mobilio | F. Via
[1] S. Colonna,et al. Thermal oxidation of Si (001) single crystal implanted with Ge ions , 2002 .
[2] D. Paul. Silicon‐Germanium Strained Layer Materials in Microelectronics , 1999 .
[3] S. Colonna,et al. Precipitation of As in thermally oxidized ion-implanted Si crystals , 1998 .
[4] F. Iacona,et al. Arsenic redistribution at the SiO 2 / S i interface during oxidation of implanted silicon , 1998 .
[5] F. Iacona,et al. Roughness of thermal oxide layers grown on ion implanted silicon wafers , 1998 .
[6] A. Ankudinov,et al. REAL-SPACE MULTIPLE-SCATTERING CALCULATION AND INTERPRETATION OF X-RAY-ABSORPTION NEAR-EDGE STRUCTURE , 1998 .
[7] J. Cressler. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .
[8] G. Sarrabayrouse,et al. Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films , 1996 .
[9] Allain,et al. Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon. , 1992, Physical review. B, Condensed matter.
[10] P. Eisenberger,et al. Extended x-ray absorption fine structure—its strengths and limitations as a structural tool , 1981 .
[11] B. E. Deal,et al. Thermal Oxidation of Heavily Doped Silicon , 1965 .
[12] T. Wadsten,et al. The Crystal Structure of SiAs. , 1965 .