论文信息 - Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling

Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling

ZusammenfassungFür die Entwicklung von elektronischen Bauelementen ist es notwendig, die bei der Herstellung ablaufenden Vorgänge (Diffusion) mathematisch beschreiben zu können (Process Modelling). Die Ionenstrahlmikroanalyse (SIMS) wurde auf höchste Richtigkeit und Empfindlichkeit optimiert. Als Referenzmethode wurde die Neutronenaktivierungsanalyse herangezogen. Die Untersuchung von systematischen Versuchsreihen bildet die Grundlage für die Verbesserung des Process Modelling. Die analytischen Charakteristica und Limitierungen von SIMS werden diskutiert.SummaryFor the development of electronic devices the mathematical description of the phenomenas occurring during the production is necessary (Process Modelling). SIMS was optimized for high accuracy and sensitivity. Neutron activation analysis was used as a reference method. The characterization of systematic test series is the foundation for the improvement of Process Modelling. The analytical figures of merit and limitations of SIMS are discussed.

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