论文信息 - Measurement of charge limit in a strained lattice GaAs photocathode

Measurement of charge limit in a strained lattice GaAs photocathode

The SLAC Linear Collider (SLC) Polarized Electron Source (PES) photocathodes have shown a charge saturation when illuminated with a high intensity laser pulse. This charge limit in the cesium-activated GaAs crystal seems to be strongly dependent on its surface condition and on the incident light wavelength. Charge limit studies with highly polarized strained lattice GaAs materials are presented.

[1] M. Browne,et al. Operation of a Ti:sapphire laser for the SLAC polarized electron source , 1993, Proceedings of International Conference on Particle Accelerators.

[2] R. E. Kirby,et al. An in-situ photocathode loading system for the SLC Polarized Electron Gun , 1993, Proceedings of International Conference on Particle Accelerators.

[3] Joshua J. Turner,et al. Observation of a charge limit for semiconductor photocathodes , 1993 .

[4] Stanley Humphries,et al. Charged Particle Beams , 1990 .

[5] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[6] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[7] K. C. Moffeit. Polarized electron beams at SLAC , 1992 .

[8] R. Bell,et al. Negative Electron Affinity Devices , 1985 .

[9] Maruyama,et al. Electron-spin polarization in photoemission from strained GaAs grown on GaAs1-xPx. , 1992, Physical review. B, Condensed matter.

[10] Hiromichi Horinaka,et al. Strain dependence of spin polarization of photoelectrons from a thin GaAs layer , 1992 .