Power trench MOSFETs with very low specific on-resistance for 25V applications
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[1] R. van Dalen,et al. Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[2] Jifa Hao,et al. An ultra dense trench-gated power MOSFET technology using a self-aligned process , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
[3] Ling Ma,et al. New trench MOSFET technology for DC-DC converter applications , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[4] Akio Nakagawa,et al. 30V new fine trench MOSFET with ultra low on-resistance , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[5] R. Farr,et al. Fully self-aligned power trench-MOSFET utilising 1 /spl mu/m pitch and 0.2 /spl mu/m trench width , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
[6] Tae Moon Roh,et al. High-density trench DMOSFETs employing two step trench techniques and trench contact structure , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[7] Ben Chan,et al. A new power W-gated trench MOSFET (WMOSFET) with high switching performance , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[8] R. Siemieniec,et al. A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode , 2005, 2005 European Conference on Power Electronics and Applications.