Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science
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Andrew M. Carlin | G. Conibeer | M. Green | S. Ringel | M. Mills | A. Ho-baillie | B. Galiana | X. Hao | J. Carlin | S. Bremner | L. Yang | T. Grassman | H. Mehrvarz | A. Mansouri | D. Chmielewski | C. Ratcliff