Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied.

[1]  L. Vandersypen,et al.  Gate-induced insulating state in bilayer graphene devices. , 2007, Nature materials.

[2]  M. Ogawa,et al.  Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs , 2011, IEEE Transactions on Electron Devices.

[3]  E. Harrell,et al.  A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs , 2003 .

[4]  Mohamed A. Osman,et al.  Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects , 1999 .

[5]  F. Guinea,et al.  Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. , 2006, Physical review letters.

[6]  Tomislav Suligoj,et al.  Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs , 2009 .

[7]  K. K. Young.  Short-channel effect in fully depleted SOI MOSFETs , 1989 .

[8]  V P Gusynin,et al.  Unconventional integer quantum Hall effect in graphene. , 2005, Physical review letters.

[9]  Byung Jin Cho,et al.  Determination of work function of graphene under a metal electrode and its role in contact resistance. , 2012, Nano letters.

[10]  G. Iannaccone,et al.  A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor , 2008, IEEE Transactions on Electron Devices.

[11]  Yuan Taur,et al.  Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs , 2001 .

[12]  Johan Nilsson,et al.  Electronic properties of graphene multilayers. , 2006, Physical review letters.

[13]  F. Guinea,et al.  The electronic properties of graphene , 2007, Reviews of Modern Physics.

[14]  T. Otsuji,et al.  Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels , 2009 .

[15]  T. Ohta,et al.  Controlling the Electronic Structure of Bilayer Graphene , 2006, Science.

[16]  Razali Ismail,et al.  Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic , 2013 .

[17]  Sergey V. Morozov,et al.  Electronic properties of graphene , 2007 .

[18]  Rong-Bin Chen,et al.  Influence of an electric field on the optical properties of few-layer graphene with AB stacking , 2006 .

[19]  Abhijit Biswas,et al.  Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs , 2007 .

[20]  M. I. Katsnelson,et al.  Chiral tunnelling and the Klein paradox in graphene , 2006 .

[21]  T. Tang,et al.  Direct observation of a widely tunable bandgap in bilayer graphene , 2009, Nature.

[22]  D. Jena,et al.  Carrier statistics and quantum capacitance of graphene sheets and ribbons , 2007, 0707.2242.

[23]  Qiang Chen,et al.  Nanoscale metal?oxide?semiconductor field-effect transistors: scaling limits and opportunities , 2004 .

[24]  K. F. Lee,et al.  Scaling the Si MOSFET: from bulk to SOI to bulk , 1992 .

[25]  N. M. R. Peres,et al.  Electronic properties of bilayer and multilayer graphene , 2007, 0712.3259.