High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer
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Miao Xu | L. Lan | Junbiao Peng | Lei Wang | Shiben Hu | H. Ning | Xianzhe Liu | R. Yao | Zheng Zeke | Ruiqiang Tao | Jianqiu Chen | Yong Zeng | Cai-hong Wei | C. Jianqiu | Tao Ruiqiang | Rihui Yao