Ionized impurity scattering in Monte Carlo calculations
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[1] E. Conwell,et al. VARIATION OF DRIFT VELOCITY WITH FIELD IN GaAs , 1966 .
[2] C. Hilsum,et al. Simple empirical relationship between mobility and carrier concentration , 1974 .
[3] B. Ridley,et al. Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference , 1977 .
[4] H. Queisser,et al. Electron scattering by ionized impurities in semiconductors , 1981 .
[5] J. G. Ruch,et al. Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo Method , 1970 .
[6] Michael A. Littlejohn,et al. Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering , 1977 .
[7] C. Snowden,et al. Large-signal modeling of GaAs MESFET operation , 1983, IEEE Transactions on Electron Devices.