论文信息 - Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator - 字舞流文

Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator

V. Vasil’ev | A. Voitsekhovskii | S. Dzyadukh | M. Yakushev | V. Varavin | S. Dvoretsky | N. Mikhailov | S. Nesmelov | G. Sidorov