Unique features and capabilities using quantum wells for infrared detection and imaging
暂无分享,去创建一个
[1] Brown,et al. Calculation and photoresponse measurement of the bound-to-continuum infrared absorption in p-type GaAs/AlxGa1-xAs quantum wells. , 1995, Physical review. B, Condensed matter.
[2] Hui Chun Liu,et al. Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors , 1993 .
[3] Thomas Fromherz,et al. Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K , 1996 .
[4] Hui C. Liu,et al. Voltage‐tuning in multi‐color quantum well infrared photodetector stacks , 1996 .
[5] M. Sundaram,et al. Quantum well infrared photodetectors , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
[7] Erich Gornik,et al. Double wavelength selective GaAs/AlGaAs infrared detector device , 1992 .
[8] M. Buchanan,et al. Multicolor voltage-tunable quantum-well infrared photodetector , 1993, IEEE Electron Device Letters.
[9] M. Buchanan,et al. Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode , 1997 .
[10] M. Buchanan,et al. Integrated quantum well intersub-band photodetector and light emitting diode , 1995 .
[11] K. A. McIntosh,et al. Quantum well intersubband heterodyne infrared detection up to 82 GHz , 1995, Photonics West.
[12] M. Buchanan,et al. High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique , 1996 .
[13] Eric Costard,et al. Switchable bicolor (5.5–9.0 μm) infrared detector using asymmetric GaAs/AlGaAs multiquantum well , 1992 .