Trench CCD image sensor
暂无分享,去创建一个
[1] K. Senda,et al. Elimination of fixed pattern noise in super-8 format CCD image sensor by the use of epitaxial wafers , 1984, 1984 International Electron Devices Meeting.
[2] K. Arai,et al. No image lag photodiode structure in the interline CCD image sensor , 1982, 1982 International Electron Devices Meeting.
[3] David H. Lumb,et al. Noise reduction techniques for CCD image sensors , 1982 .
[4] Koichi Kato. As-ion-implantation simulation for trench structures using Monte Carlo method , 1988 .
[5] Y. Endo,et al. A 2-million Pixel Ccd Imager Overlaid With An Amorphous Silicon Photoconversion Layer , 1988, 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.
[6] Shinji Odanaka,et al. SCC (Surrounded Capacitor Cell) Structure for DRAM , 1987 .
[7] Takao Kuroda,et al. A smear-suppressing CCD imager , 1986, 1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[8] Eric G. Stevens,et al. A 1.4-million-element CCD image sensor , 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[9] Kenkichi Tanioka,et al. Avalanche Multiplication in Amorphous Selenium , 1987 .
[10] K. Taketoshi,et al. An avalanche-mode amorphous Selenium photoconductive layer for use as a camera tube target , 1987, IEEE Electron Device Letters.
[11] T. Kamata,et al. Interline CCD image sensor with an antiblooming structure , 1984, IEEE Transactions on Electron Devices.