论文信息 - Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection

Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection

A physics-based compact transport and charge model for GaN HEMTs has been developed. The model includes effects such as self-heating, non-linear access region behavior, electron-phonon interaction etc. The model is validated against fabricated devices and is used to evaluate fT improvements in short channel devices. The model is also a suitable base for GaN FET circuit simulation compact models.

D. Antoniadis | Ujwal Radhakrishna | Dong-Seup Lee | T. Palacios | Lan Wei

[1] Xiang Gao,et al. InAlN/GaN HEMTs With AlGaN Back Barriers , 2011, IEEE Electron Device Letters.

[2] S. Keller,et al. Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs , 2005, IEEE Transactions on Electron Devices.

[3] A. Khakifirooz,et al. A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters , 2009, IEEE Transactions on Electron Devices.

[4] Debdeep Jena,et al. Effect of Optical Phonon Scattering on the Performance of GaN Transistors , 2010, IEEE Electron Device Letters.

[5] Changwook Jeong,et al. On Backscattering and Mobility in Nanoscale Silicon MOSFETs , 2009, IEEE Transactions on Electron Devices.

[6] Arvydas Matulionis,et al. Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel , 2010, Proceedings of the IEEE.

[7] Mark S. Lundstrom,et al. On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs , 2012, IEEE Transactions on Electron Devices.

[8] Lan Wei,et al. Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation , 2012, IEEE Transactions on Electron Devices.