论文信息 - Scattering of silicon inversion layer electrons by metal/oxide interface roughness

Scattering of silicon inversion layer electrons by metal/oxide interface roughness

The roughness at the metal/gate oxide interface of metal‐oxide‐semiconductor field‐effect transistor (MOSFET) has been modeled. The mobility of electrons inside the channel of the MOSFET, limited by the scattering resulting from this roughness, has been calculated. The magnitude of this scattering mechanism is a strong function of the oxide thickness. For a MOSFET with very thin gate oxide (<100 A), this limiting mobility may become comparable to the total mobility, and the scattering of electrons by the remote interface roughness can no longer be ignored.

Tso-Ping Ma | T. Ma | Jia Li | Jia Li

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