论文信息 - Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors - 字舞流文

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors

A. Forchel | S. Bader | G. Bacher | G. Landwehr | C. Schumacher | T. Kümmell | M. Legge | J. Nürnberger | W. Faschinger