Impact ionization in InSb probed by terahertz pump—terahertz probe spectroscopy

Indium antimonide InSb is a model system for the study of hot-electron dynamics due to its low band gap of 170 meV at room temperature 1 and the fact that it has the highest electron mobility and saturation velocity among all known semiconductors. The wealth of nonequilibrium transport phenomena that have been observed in this material 2–4 is of special interest due to the large nonparabolicity of the conduction band, 5 which results in negative differential mobility

[1]  P. Corkum,et al.  Ultrafast Phenomena XVI , 2009 .

[2]  Aaron M. Lindenberg,et al.  Ultrafast electron cascades in semiconductors driven by intense femtosecond terahertz pulses , 2008 .

[3]  K. Nelson,et al.  Generation of high average power 1 kHz shaped THz pulses via optical rectification , 2008 .

[4]  R. Brazis,et al.  Electron and phonon dynamics in indium antimonide crystals , 2008 .

[5]  K. Nelson,et al.  Generation of 10 μJ ultrashort terahertz pulses by optical rectification , 2007 .

[6]  Jaap I. Dijkhuis,et al.  Performance of combined (100)-(110) ZnTe crystals in an amplified THz time-domain spectrometer , 2007 .

[7]  S. Ganichev,et al.  Intense terahertz excitation of semiconductors , 2006 .

[8]  J. Kuhl,et al.  Velocity matching by pulse front tilting for large area THz-pulse generation. , 2002, Optics express.

[9]  Matthew C. Beard,et al.  Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy , 2000 .

[10]  X. Zhang,et al.  Free‐space electro‐optic sampling of terahertz beams , 1995 .

[11]  X. Lei,et al.  HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS , 1995 .

[12]  Sergey Ganichev,et al.  Nonlinear far-infrared absorption in InSb due to light impact ionization , 1994 .

[13]  C. Schmeiser,et al.  Hot electron transport in semiconductors , 1989 .

[14]  G. Valušis,et al.  Electron gas heating and cooling effects by microwave electric fields in compensated InSb , 1988 .

[15]  Mayer,et al.  Far-infrared nonlinear optics. II. chi (3) contributions from the dynamics of free carriers in semiconductors. , 1986, Physical review. B, Condensed matter.

[16]  J. T. Devreese,et al.  Impact ionisation probability in InSb , 1982 .

[17]  Toshihiko Kobayashi.  Detailed calculation of energy relaxation time of hot electrons in InSb , 1977 .

[18]  V. I. Sidorov,et al.  Sov Phys Semicond , 1975 .

[19]  E. Koteles,et al.  Far-infrared phonon absorption in InSb , 1974 .

[20]  D. Ferry.  Decay of polar-optical phonons in semiconductors , 1974 .

[21]  B. Ancker‐Johnson,et al.  Nonequilibrium Carrier Phenomena in n -Type InSb , 1972 .

[22]  R. Larrabee,et al.  Current oscillations and microwave emission in indium antimonide , 1966 .

[23]  G. V. Chester,et al.  Solid State Physics , 2000 .

[24]  W. Shockley.  Problems related to p-n junctions in silicon , 1961 .

[25]  E. Kane.  Zener tunneling in semiconductors , 1960 .

[26]  E. Kane,et al.  Band structure of indium antimonide , 1957 .

[27]  W. D. Lawson,et al.  Optical and Photo-Electrical Properties of Indium Antimonide , 1954 .