论文信息 - Design method for fully integrated CMOS RF LNA

Design method for fully integrated CMOS RF LNA

An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 Ω input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 μm RF CMOS process.

Jean Gaubert | Sylvain Bourdel | M. Egels | Philippe Pannier

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