ZnSe-ZnCdSe quantum confined Stark effect modulators

We report room temperature operation of a II‐VI p‐i‐n quantum confined Stark effect modulator using a ZnSe‐Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p‐n junction. A n‐type ZnSe layer was used as a novel contact to the p‐type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.