论文信息 - Direct evidence for Ge preferential growth at steps and out-of-phase boundaries of (7 × 7) domains on Si(111) in solid phase epitaxy - 字舞流文

Direct evidence for Ge preferential growth at steps and out-of-phase boundaries of (7 × 7) domains on Si(111) in solid phase epitaxy

Y. Homma | H. Hibino | N. Aizawa

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