论文信息 - Multi-quantum-well InGaNAs/GaAs resonant cavity enhanced photodetector with integrated vertical taper structure

Multi-quantum-well InGaNAs/GaAs resonant cavity enhanced photodetector with integrated vertical taper structure

In this work, we analyzed and demonstrated a multi-quantum-well InGaNAs/GaAs RCE photodetector with a vertical taper absorption cavity operating at 1550nm. The GaAs/AlAs distributed Bragg reflectors and InGaNAs/GaAs quantum wells were grown on GaAs substrate by molecular beam epitaxy. The growth of InGaNAs/GaAs quantum wells maybe solves the problem that the GaAs-based materials can only response to short wavelength. The peak wavelength of the spectral response of our photodetector is at 1558.7nm, and the spectral linewidth is 3 nm.

Xiaomin Ren | Hui Huang | Yongqing Huang | Yu-feng Xu

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