MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

Rapid thermal processing (RTP) was applied to the fabrication of the ultrathin ( approximately 10 nm) high-quality fluorinated oxides in O/sub 2/+NF/sub 3/. NF/sub 3/ (diluted in N/sub 2/) was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O/sub 2/ during the initial stage of RTO. The electrical characteristics of MOS capacitors have been studied and correlated with the chemical properties. It was found that SiO/sub 2/ with a small amount of F incorporated shows reduced interface state generation under F-N injection, whereas excessive F incorporation is detrimental.<<ETX>>

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