论文信息 - Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

We demonstrate 20-GHz input bandwidth of an optoelectronic sample-and-hold circuit using optically triggered metal-semiconductor-metal switches made of low-temperature-grown GaAs. Linearity /spl ges/4 effective-number-of-bits and an estimated 3-dB bandwidth of up to /spl sim/63 GHz are observed for the sample-and-hold process, making the device a potential candidate for moderate resolution, high-speed sampling applications.

R. Urata | J.S. Harris | R. Takahashi | D.A.B. Miller | V.A. Sabnis

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