A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing
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Meng-Fan Chang | Tien-Fu Chen | Li-Yue Huang | Wen-Zhang Lin | Yen-Ning Chiang | Chia-Chen Kuo | Ching-Hao Chuang | Keng-Hao Yang | Hsiang-Jen Tsai | Shyh-Shyuan Sheu | Meng-Fan Chang | Wen-Zhang Lin | Yen-Ning Chiang | Tien-Fu Chen | S. Sheu | C. Chuang | Chia-Chen Kuo | Hsiang-Jen Tsai | Li-Yue Huang | Keng-Hao Yang
[1] Hanyu Takahiro,et al. Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine , 2014 .
[2] Tien-Fu Chen,et al. An Adaptively Dividable Dual-Port BiTCAM for Virus-Detection Processors in Mobile Devices , 2009, IEEE Journal of Solid-State Circuits.
[3] Meng-Fan Chang,et al. A Process Variation Tolerant Embedded Split-Gate Flash Memory Using Pre-Stable Current Sensing Scheme , 2009, IEEE J. Solid State Circuits.
[4] Meng-Fan Chang,et al. RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[5] Tetsuo Endoh,et al. 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[6] Heng-Yuan Lee,et al. A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability , 2011, 2011 IEEE International Solid-State Circuits Conference.
[7] Hideto Hidaka,et al. 40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[8] Yukio Hayakawa,et al. An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput , 2012, IEEE Journal of Solid-State Circuits.
[9] Meng-Fan Chang,et al. 19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[10] Makoto Kitagawa,et al. A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput , 2011, 2011 IEEE International Solid-State Circuits Conference.
[11] Hiroyuki Kawai,et al. A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS , 2013, IEEE Journal of Solid-State Circuits.
[12] Mahesh Mehendale,et al. 8.3 A 10.5μA/MHz at 16MHz single-cycle non-volatile memory access microcontroller with full state retention at 108nA in a 90nm process , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[13] Peilin Song,et al. 1Mb 0.41 µm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing , 2013, 2013 Symposium on VLSI Circuits.
[14] Doris Schmitt-Landsiedel,et al. Bitline-capacitance-cancelation sensing scheme with 11ns read latency and maximum read throughput of 2.9GB/s in 65nm embedded flash for automotive , 2012, 2012 IEEE International Solid-State Circuits Conference.
[15] Shoji Ikeda,et al. A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture , 2012, 2012 Symposium on VLSI Circuits (VLSIC).
[16] Meng-Fan Chang,et al. Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme , 2014, IEEE Journal of Solid-State Circuits.
[17] Meng-Fan Chang,et al. An Asymmetric-Voltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded Flash Macros , 2015, IEEE Journal of Solid-State Circuits.
[18] Meng-Fan Chang,et al. A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time , 2012, 2012 IEEE International Solid-State Circuits Conference.
[19] Meng-Fan Chang,et al. Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications , 2012, IEEE Journal of Solid-State Circuits.
[20] Hugh P. McAdams,et al. An 8MHz 75µA/MHz zero-leakage non-volatile logic-based Cortex-M0 MCU SoC exhibiting 100% digital state retention at VDD=0V with <400ns wakeup and sleep transitions , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[21] Yoichi Yano. Take the expressway to go greener , 2012, 2012 IEEE International Solid-State Circuits Conference.
[22] Meng-Fan Chang,et al. ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing , 2014, 2014 Symposium on VLSI Circuits Digest of Technical Papers.
[23] Meng-Fan Chang,et al. RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications , 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).