论文信息 - Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)

Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)

The substrate temperature and arsenic pressure dependence of the density of InAs three‐dimensional (3D) islands formed on GaAs(100) is found to exhibit a behavior that cannot be reconciled within the currently popular view of MBE growth. Rather, either an arsenic coverage induced strain enhanced In migration or strain dependent arsenic incorporation at islands, or both, appear to be operative. Plan‐view and cross‐sectional transmission electron microscopy, including the nature of the Moire fringes, are used to obtain cluster size distribution and demarcation between size regime for coherent versus incoherent islands. The results point to the possibility of realizing a regular array of quantum dots made of coherently strained 3D islands of uniform size via growth on prepatterned substrates.

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