论文信息 - Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge–Sb–S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge23.5Sb11.8S64.7 glass composition is supported by these measurements. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

R. Golovchak | H. Jain | O. Shpotyuk | A. Kovalskiy | A. Żurawska

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