Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber
暂无分享,去创建一个
H. Asahi | S. Gonda | K. Yamamoto | K. Miki
[1] H. Asahi,et al. Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony , 1996 .
[2] J. Newey,et al. Atomic force microscopy studies of substrate cleaning using tris(dimethylamino)arsenic and tris(dimethylamino) antimony and investigations of surface decomposition mechanisms , 1996 .
[3] G. B. Stringfellow,et al. InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony , 1995 .
[4] G. B. Stringfellow,et al. Growth of GaSb using trisdimethylaminoantimony , 1995 .
[5] H. Asahi,et al. The etching effect of trisdimethylaminoantimony on (001) planar substrates , 1995 .
[6] X. F. Liu,et al. Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium , 1995 .
[7] X. F. Liu,et al. Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony , 1994 .
[8] S. Takatani,et al. Digital etching of GaAs using Se molecular beam and atomic hydrogen beam , 1994 .
[9] G. B. Stringfellow,et al. Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb , 1994 .
[10] X. F. Liu,et al. Etching effect on metal‐organic molecular‐beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony , 1994 .
[11] R. M. Biefeld,et al. Growth of InSb using tris(dimethylamino)antimony and trimethylindium , 1994 .
[12] H. Asahi,et al. Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy , 1993 .
[13] K. Jensen,et al. Surface reactions of dimethylaminoarsine during MOMBE of GaAs , 1992 .
[14] H. Asahi,et al. MOMBE growth characteristics of antimonide compounds , 1992 .
[15] G. B. Stringfellow,et al. Decomposition studies of triisopropylantimony and triallylantimony , 1991 .
[16] M. Weyers,et al. Substituted arsines as As sources in MOMBE , 1990 .
[17] I. Brener,et al. Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine , 1990 .
[18] G. B. Stringfellow,et al. Organometallic vapor phase epitaxial growth of InP using new phosphorus sources , 1986 .
[19] W. Tsang,et al. Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb , 1985 .
[20] K. Moedritzer. The Preparation of Trisdimethylaminostibine , 1964 .
[21] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .