论文信息 - Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs - 字舞流文

Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs

M. Wojtowicz | D. Streit | A. Han | T. Block | D. Pascua

[1] J. David,et al. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors , 1992 .

[2] K. Kern,et al. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence , 1991 .

[3] K. West,et al. Si dopant migration and the AlGaAs/GaAs inverted interface , 1991 .

[4] Smith,et al. Fermi-energy-edge singularity in quantum wells containing more than one occupied subband. , 1991, Physical review. B, Condensed matter.

[5] Peter G. Newman,et al. Photoreflectance study of surface Fermi level in GaAs and GaAlAs , 1990 .

[6] Hopkins,et al. Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth. , 1990, Physical review. B, Condensed matter.

[7] Gustaaf Borghs,et al. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures , 1989 .

[8] D. Neikirk,et al. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells , 1989 .

[9] L. Sk,et al. Photoluminescence line shape in degenerate semiconductor quantum wells , 1988 .

[10] M. S. Skolnick,et al. Observation of a many-body edge singularity in quantum well luminescence spectra. , 1987, Physical review letters.

[11] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .