Parasitic extraction methodology for insulated gate bipolar transistors

This paper presents a methodology for extraction of the electrical package parasitics of insulated gate bipolar transistor power modules using simple electrical measurements. Nonidealities of device performance in zero-voltage and zero-current switching are exploited to obtain the parasitic collector and emitter inductance. Simple impedance measurements are performed to extract gate inductance and resistance. The extraction methodology is validated by comparing two-dimensional numerical simulation results including package parasitics with measured data. A close match between the two indicates the robustness of the extraction procedure.

[1]  A. von Jouanne,et al.  The effect of long motor leads on PWM inverter fed AC motor drive systems , 1995, Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95.

[2]  Krishna Shenai,et al.  Test circuits for characterizing power transistors in ZVS and ZCS circuits , 1998, IMTC/98 Conference Proceedings. IEEE Instrumentation and Measurement Technology Conference. Where Instrumentation is Going (Cat. No.98CH36222).

[3]  Krishna Shenai,et al.  Test circuits for verification of power device models , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[4]  Malay Trivedi,et al.  Modeling the turn-off of IGBT's in hard- and soft-switching applications , 1997 .

[5]  Enrico Dallago,et al.  Analysis of an IGBT power module , 1994, Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics.

[6]  Dushan Boroyevich,et al.  Extraction of parasitics within wire-bond IGBT modules , 1998, APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition.

[7]  Richard A. Lukaszewski,et al.  Use of a co-axial CT and planar bus to improve IGBT device characterization , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[8]  Y. Minoya,et al.  Analysis of IPM current oscillation under short circuit condition , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[9]  Sameer Pendharkar,et al.  Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's) , 1998 .

[10]  C. Williams,et al.  Heavy aluminum wire bonding-a state of the art assessment , 1995, 1995 Proceedings. 45th Electronic Components and Technology Conference.

[11]  Allen R. Hefner,et al.  An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor , 1988 .

[12]  Jih-Sheng Lai,et al.  Characterization of power electronics system interconnect parasitics using time domain reflectometry , 1998 .