论文信息 - High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy - 字舞流文

High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

I. Shibasaki | K. Nagase | T. Ito | Takashi Yoshida | T. Iwabuchi | K. Sako | Y. Kanayama | F. Ichimori | Masaki Yamamoto