Room-Temperature InGaAs Detector Arrays For 2.5 µm

This paper describes new alloy heterojunction detectors of In.8Ga.2As/InAs.56p.4 which can detect light between 1.7 and 2.6 μm with 50% quantum efficiency and 5 mA/cm2 dark current (-1V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 μm diameter devices (spaced 400 um) could be made on a 25 x 30 mm wafer with overall yield above 93%. The ability to operate under -1V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.