论文信息 - Laser De-Bonding from Silicon Wafers with Picosecond 2.09-μm Holmium Laser - 字舞流文

Laser De-Bonding from Silicon Wafers with Picosecond 2.09-μm Holmium Laser

We study an effect of pulse duration of 2.09-μm laser on the laser de-bonding of gold from silicon wafers. Developed picosecond Ho:YAG laser with a simple dispersion management is found to be optimal for the process.

A. Pugžlys | A. Baltuska | B. Povazay | I. Astrauskas

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