A Compact Over-Voltage Protection Circuit for HBT Power Amplifiers

This paper presents an over-voltage protection circuit with low capacitance loading and small size. Its operation principles and measured performance will be presented. As a case study, a 5.4-6.0 GHz InGaP/GaAs HBT power amplifier with this compact over-voltage protection circuit, resulting in no degradation in PA performance, is demonstrated

[1]  G. P. Li,et al.  A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers , 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

[2]  Antonino Scuderi,et al.  A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control , 2005, IEEE Journal of Solid-State Circuits.

[3]  G.P. Li,et al.  InGaP/GaAs HBT RF power amplifier with compact ESD protection circuit , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[4]  Tung-Yang Chen,et al.  On-chip ESD protection design by using polysilicon diodes in CMOS process , 2001 .

[5]  R. Hattori,et al.  A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique , 2000, IEEE Journal of Solid-State Circuits.