In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 /spl mu/m. The 77-K peak responsivity was 5.6 mA/W with the detectivity D/sup */ of 1.2/spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W at the bias of 0.4 V.

[1]  Sanjay Krishna,et al.  High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K , 2001 .

[2]  Sanjay Krishna,et al.  Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector , 2001 .

[3]  Meimei Z. Tidrow,et al.  High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition , 2004 .

[4]  Meimei Z. Tidrow,et al.  Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors , 2004 .

[5]  S. Chakrabarti,et al.  Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors , 2004, IEEE Photonics Technology Letters.

[6]  Hooman Mohseni,et al.  Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector , 1998 .

[7]  Sanjay Krishna,et al.  High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors , 2003 .

[8]  M. P. Pires,et al.  InAs quantum dots over InGaAs for infrared photodetectors , 2004 .

[9]  Victor Ryzhii,et al.  The theory of quantum-dot infrared phototransistors , 1996 .

[10]  Elias Towe,et al.  NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS/GAAS QUANTUM DOT INFRARED PHOTODETECTORS , 1998 .

[11]  Joe C. Campbell,et al.  Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region , 2001 .

[12]  Joe C. Campbell,et al.  Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity , 2002 .

[13]  Jamie D. Phillips,et al.  Evaluation of the fundamental properties of quantum dot infrared detectors , 2002 .

[14]  A. N. Yablonsky,et al.  Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD , 2003 .

[15]  S. Krishna,et al.  Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8–12 μm) , 2004 .

[16]  Zhengmao Ye,et al.  Quantum-Dot Infrared Photodetectors , 2007, Proceedings of the IEEE.