Local Interface Composition and Band Offset Tuning in ZnSe-GaAs(001) Heterostructures

ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio (we explored the 0.1-10 range) we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order at the interface. Correspondingly, the valence band discontinuity is found to vary from 0.6eV (Se-rich interface) to 1.2eV (Zn-rich interface) in the interface composition range examined.

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