Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs

Analytical models for threshold voltage, and drain induced barrier lowering effect of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for threshold voltage makes the model suitable to be embedded in circuit simulation and design tools.

[1]  Ōyō Butsuri Gakkai,et al.  Japanese journal of applied physics : JJAP online. , 2008 .

[2]  G. Pei,et al.  FinFET design considerations based on 3-D simulation and analytical modeling , 2002 .

[3]  H. Hwang,et al.  (IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure , 1989 .

[4]  Chi-Woo Lee,et al.  Junctionless multigate field-effect transistor , 2009 .

[5]  Guangxi Hu,et al.  Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors , 2007 .

[6]  Marcelo Antonio Pavanello,et al.  Threshold voltage in junctionless nanowire transistors , 2011 .

[7]  Lingli Wang,et al.  An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs , 2011, Microelectron. J..

[8]  Sorin Cristoloveanu,et al.  3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors , 2011 .

[9]  H. J. Hagger,et al.  Solid State Electronics , 1960, Nature.

[10]  Zhiping Yu,et al.  Scaling Theory for FinFETs Based on 3-D Effects Investigation , 2007, IEEE Transactions on Electron Devices.

[11]  Jin Soo Kim,et al.  First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation , 2013, IEEE Electron Device Letters.

[12]  B. Hong,et al.  Journal of the Korean Physical Society: Preface , 2003 .

[13]  Xing Zhou,et al.  Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors , 2013 .

[14]  Lingli Wang,et al.  Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors , 2014, IEEE Transactions on Electron Devices.