论文信息 - Redistribution of Cr during annealing of 80Se‐implanted GaAs

Redistribution of Cr during annealing of 80Se‐implanted GaAs

Cr in‐depth distributions have been measured in Se‐ion‐implanted GaAs as a function of postimplant annealing using secondary‐ion mass spectrometry (SIMS). Analysis shows that Cr redistributes into regions of residual damage following 800 °C annealing. As the damage anneals at higher temperatures, however, the Cr tends toward the GaAs surface. This phenomenon offers a plausible explanation of the discrepancies between the observed electrical and chemical distributions of ion‐implanted Se.

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